Detailed listing

1. L. C. Lew Yan Voon, C. Galeriu, and M. Willatzen, Physica E 18, 547-549 (2003).
   Comment on ``Confined states in two-dimensional flat elliptic quantum dots and elliptic quantum wires"
   1. M. Willatzen and L. C. Lew Yan Voon, Physica E 16, 286 (2003). Confined states in parabolic cylinder quantum dots.

2. L. C. Lew Yan Voon, App. Phy. Lett. 70, 2446-2448 (1998).
   In-plane birefringence of asymmetric (001) quantum wells.
   1. J. Salonen and E. Laine, preprint (1999). In-plane birefringence of porous silicon free-standing films.

3. R. A. Soref, L. Friedman, L. C. Lew Yan Voon, L. R. Ram-Mohan, and G. Sun, J. Vac. Sci. Technol. B 16, 1525-1528 (1998).
   Progress toward silicon-based intersubband lasers.
   1. R. A. Soref, MRS Bulletin 23, 20 (1998). Applications of silicon-based optoelectronics.

4. L. C. Lew Yan Voon, M. Willatzen, M. Cardona, and L. R. Ram-Mohan, J. App. Phys. 80, 600-602 (1996).
   Comment on ``Multiband coupling effects on electron quantum well intersubband transitions''
   1. M. Helm, ``The Basic Physics of Intersubband Transitions," in Semiconductors and Semimetals, 62, 1 (2000).
   2. H. C. Liu, M. Buchanan, and Z. R. Wasilewski, in Intersubband transitions in quantum wells: Physics and Devices, S. S. Li (editor), p. 50 (Kluwer, 1998). QWIP performance and polarization selection rule.
   3. L. C. Lew Yan Voon, L. R. Ram-Mohan, and R. A. Soref, Appl. Phys. Lett. 70, 1837 (1997). Electronic and optical properties of (001) Si/ZnS heterostructures.
   4. L. H. Peng and C. G. Fonstad, J. Appl. Phys. 80, 603 (1996). Reply to ``Comment on: `Multiband coupling effects on electron quantum well intersubband transitions' ''
   5. M. E. Flatté, P. M. Young, L.-H. Peng, H. Ehrenreich, Phys. Rev. B 53, 1963 (1996). Generalized superlattice K.p theory and intersubband optical transitions.

5. M. Willatzen, L. C. Lew Yan Voon, P. V. Santos, M. Cardona, D. Munzar, and N. E. Christensen, Phys. Rev. B 52, 5070-5081 (1995).
   Theoretical study of band-edge states in Sn₁Ge_n strained-layer superlattices
   1. L. Fernández-Alvarez, G. Monsivais, and V. R. Velasco, J. Phys.: Condens. Matter 8, 8859 (1996). Electronic structure of (001) (AlAs)_k(GaAs)_l(AlAs)_m(GaAs)_n superlattices.

6. L. C. Lew Yan Voon, A. Fainstein, P. Santos, P. Etchegoin, and M. Cardona, Phys. Rev. B 52, 2201-2202 (1995).
   Comment on ``Observation of time-nonreversible optical interaction with zinc-blende semiconductors''
   1. D. F. Nelson and A. L. Ivanov, Optics Letters 23, 86 (1998). Alternative explanation of specular optical activity.
   2. B. Koopmans, P. V. Santos, and M. Cardona, Phys. Stat. Solidi (b)206, 419 (1998). Optical activity in semiconductors: stress and confinement effects.
   3. B. B. Krichevtsov, V. V. Pavlov, R. V. Pisarev, and V. N. Gridnev, Phys. Rev. Lett. 76, 4628 (1996). Magnetoelectric spectroscopy of electronic-transitions in antiferromagnetic Cr₂O₃.
   4. E. L. Ivchenko, Phys. Solid State 38, 1140 (1996) [Fiz. Tverd. Tela 38, 2066 (1996)]. The principle of symmetry of kinetic coefficients and spin-orbit interaction in crystals.

7. L. C. Lew Yan Voon, M. Willatzen, and L. R. Ram-Mohan, J. Appl. Phys. 78, 295-298 (1995).
   Can normal incidence absorption be realized with n-doped (001)-grown direct-gap quantum wells?
   1. M. Helm, ``The Basic Physics of Intersubband Transitions," in Semiconductors and Semimetals, 62, 1 (2000).
   2. H. C. Liu, M. Buchanan, and Z. R. Wasilewski, in Intersubband transitions in quantum wells: Physics and Devices, S. S. Li (editor), p. 50 (Kluwer, 1998). QWIP performance and polarization selection rule.
   3. S.-Y. Wang and C.-P. Lee, in Intersubband transitions in quantum wells: Physics and Devices, S. S. Li (editor), p. 110 (Kluwer, 1998). Normal incident two color voltage tunable InGaAs qauntum well infrared photodetectors.
   4. R.Yang, Superlattices and Microstructures 24, 209 (1998). Can multiband coupling effects due to remote bands cause significant normal-incidence absorption in n-type direct-gap semiconductor quantum wells?
   5. S. Y. Wang and C. P. Lee, J. Appl. Phys. 82, 2680 (1997). Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors.
   6. S. Y. Wang and C. P. Lee, Appl. Phys. Lett. 71, 119 (1997). Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions.
   7. R. Q. Yang, Proceedings of SPIE 2999, 161 (1997). Can coupling with remote conduction bands cause a significant normal-incidence absorption in n-type direct-gap semiconductor quantum wells?
   8. L. C. Lew Yan Voon, Appl. Phys. Lett. 70, 2446 (1997). In-plane birefringence of asymmetric (001) quantum wells.
   9. L. C. Lew Yan Voon, L. R. Ram-Mohan, and R. A. Soref, Appl. Phys. Lett. 70, 1837 (1997). Electronic and optical properties of (001) Si/ZnS heterostructures.
   10. J. Y. Duboz, V. Berger, N. Laurent, D. Adam, and J. Nagle, Appl. Phys. Lett. 70, 1569 (1997). Grating coupled infrared modulator at normal incidence based on intersubband transitions.
   11. E. E. Takhtamirov and V. A. Volkov, Semicond. Sci. Technol.12, 77 (1997). Envelope-function method for the conduction band in graded heterostructures.
   12. J. Y. Duboz, J. Appl. Phys. 80, 5432 (1996). Grating-coupled intersubband transitions in microcavities.
   13. L. H. Peng and C. G. Fonstad, J. Appl. Phys. 80, 603 (1996). `Reply to ``Comment on: `Multiband coupling effects on electron quantum well intersubband transitions' ''.
   14. L. C. Lew Yan Voon, M. Willatzen, M. Cardona, and L. R. Ram-Mohan, J. App. Phys. 80, 600 (1996). Comment on ``Multiband coupling effects on electron quantum well intersubband transitions''.
   15. R. Q. Yang, Phys. Rev. B 52, 11958 (1996). Optical intersubband transitions in conduction-band quantum wells.

8. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 50, 14421-14434 (1994).
   Calculations of second-order nonlinear optical susceptibilities in III-V and II-VI semiconductor heterostructures
   1. S. N. Rashkeev, S. Limpijumnong, and W. Lambrecht, Phys. Rev. B 59, 2737 (1999).
   2. S. N. Rashkeev, W. Lambrecht, and B. Segall, Phys. Rev. B 57, 3905 (1998). Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors.
   3. L. C. Lew Yan Voon, Mat. Res. Soc. Sym. Proc. 491 (1998). Optical properties of materials using the empirical tight-binding method.
   4. L. C. Lew Yan Voon, L. R. Ram-Mohan, and R. A. Soref, Appl. Phys. Lett. 70, 1837 (1997). Electronic and optical properties of (001) Si/ZnS heterostructures.
   5. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, IEEE J. Quantum Electronics 32, 1334 (1996). Optimized second-harmonic generation in asymmetric double quantum wells.
   6. L. C. Lew Yan Voon and M. Willatzen, Semicond. Science Technol. 10, 416 (1995). Calculations of the intersubband optical properties of quantum wells, wires and dots.
   7. L. C. Lew Yan Voon, M. Willatzen, and L. R. Ram-Mohan, J. Appl. Phys. 78, 295 (1995). Can normal incidence absorption be realized with n-doped (001)-grown direct-gap quantum wells?
   8. L. R. Ram-Mohan and J. R. Meyer, Int. J. Nonlinear Opt. Phys. 4, 191 (1995). Multiband finite element modeling of wavefunction-engineered electro-optical devices.

9. P. Etchegoin, A. Fainstein, P. Santos, L. C. Lew Yan Voon, and M. Cardona, Solid State Commun. 92, 505-510 (1994).
   Linear terms in k in the macroscopic optical properties of zincblende type materials: Theory and experiment
   1. D. F. Nelson and A. L. Ivanov, Optics Letters 23, 86 (1998). Alternative explanation of specular optical activity.
   2. B. Koopmans, P. V. Santos, and M. Cardona, Phys. Stat. Solidi (b)206, 419 (1998). Optical activity in semiconductors: stress and confinement effects.
   3. E. L. Ivchenko, Phys. Solid State 38, 1140 (1996) [Fiz. Tverd. Tela 38, 2066 (1996)]. The principle of symmetry of kinetic coefficients and spin-orbit interaction in crystals.
   4. M. Kuball, PhD Dissertation, University of Stuttgart (1995). Effekte der Oberfläche, der Dotierung und eines elektrischen Feldes auf die optischen und elektronischen Eigenschaften von GaAs.
   5. L. C. Lew Yan Voon, A. Fainstein, P. Santos, P. Etchegoin, and M. Cardona, Phys. Rev. B 52, 2201 (1995). Comment on ``Observation of time-nonreversible optical interaction with zinc-blende semiconductors.''
   6. N. I. Zheludev, S. V. Popov, Yu. P. Svirko, A. Malinowski, and A. R. Bungay, Phys. Rev. B 52, 2203 (1995). Reply to `Comment on ``Observation of time-nonreversible optical interaction with zinc-blende semiconductors.'''

10. L. C. Lew Yan Voon and L. R. Ram-Mohan, Superlattices and Microstructures 14, 49-52 (1993).
    Band-to-band lasing in type-II GaAs-AlAs superlattices
    1. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, E. R. Youngdale, and L. R. Ram-Mohan, IEEE J. Quant. Elec. 31, 706 (1995). Momentum-space reservoir for enhancement of intersubband 2nd-harmonic generation.

11. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 47, 15500-15508 (1993).
    Tight-binding representation of the optical matrix elements: Theory and applications
    1. B. Jogai, Solid State Comm. 116, 153 (2000). Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model.
    2. D. R. Yakovlev, E. L. Ivchenko, V. P. Kochereshko, A. V. Platonov, S. V. Zaitsev, A. A. Maksimov, I. I. Tartakovskii, V. D. Kulakovskii, W. Ossau, M. Keim, A. Waag, G. Landwehr, Phys. Rev. B 61, R2421 (2000). Orientation of chemical bonds at type-II heterointerfaces probed by polarized optical spectroscopy.
    3. L. R. Ram-Mohan, I. Vurgaftman, J. R. Meyer, and D. Dossa, in {\it Handbook of Nanostructured Materials and Nanotechnology}, H. S. Nalwa (editor), vol.~2, chp.~15, p.~707 (Academic Press, 2000). Wave-function engineering: A new paradigm in quantum nanostructure modeling.
    4. A. V. Platonov, V. P. Kochereshko, E. L. Ivchenko, G. V. Mikhailov, D. R. Yakovlev, M. Keim, W. Ossau, A. Waag, G. Landwehr, Phys. Rev. Lett. 83, 3546 (1999). Giant electro-optical anisotropy in type-II heterostructures.
    5. T. B. Boykin, Phys. Rev. B60, 15810 (1999). Exact representation of exp(iq.r) in the empirical tight-binding method and its application to electromagnetic interactions.
    6. K. Leung, S. Pokrant, and K. B. Whaley, Phys. Rev. B 57, 12291 (1998). Exciton fine structure in CdSe nanoclusters.
    7. P. Vogl, M. Graf, and A. Görling, Mat. Res. Soc. Symp. Proc. 491 (1998). Let there be light!
    8. L. C. Lew Yan Voon, Mat. Res. Soc. Sym. Proc. 491 (1998). Optical properties of materials using the empirical tight-binding method.
    9. D. Rönnow, P. Santos, M. Cardona, E. Anastassakis, and M. Kuball, Phys. Rev. B 57, 4432 (1998). Piezo-optics of InP in the visible-ultraviolet range.
    10. B. Koopmans, P. V. Santos, and M. Cardona, Phys. Stat. Solidi (b)206, 419 (1998). Optical activity in semiconductors: stress and confinement effects.
    11. K. Leung and K. B. Whaley, Phys. Rev. B 56, 7455 (1997). Electron-hole interactions in silicon nanocrystals.
    12. M. Murayama and T. Nakayama, Jpn. J. Appl. Phys. 36, L268 (1997). Effect of the surface-atomic positions on reflectance difference spectra of [001]-GaAs \beta2 Structure.
    13. D. Trivedi and N. Anderson, IEEE J. Selected Topics in Quantum Electronics 2, 197 (1997). Modeling the near-gap refractive index properties of semiconductor multiple quantum wells and superlattices.
    14. L. C. Lew Yan Voon, Appl. Phys. Lett. 70, 2446 (1997). In-plane birefringence of asymmetric (001) quantum wells.
    15. L. C. Lew Yan Voon, L. R. Ram-Mohan, and R. A. Soref, Appl. Phys. Lett. 70, 1837 (1997). Electronic and optical properties of (001) Si/ZnS heterostructures.
    16. Z. Yang and Z. Xu, Phys. Rev. B 54, 17577 (1996). Electronic and optical properties of unstrained and strained wurtzite GaN.
    17. T. Osotchan, V. W. L. Chin, and T. L. Tansley, J. Appl. Phys. 80, 5342 (1996). Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection.
    18. Z. Yang and Z. Xu, J. Phys.: Condens. Matter 8, 8303 (1996). A theoretical study of electronic and optical properties in wurtzite GaN.
    19. A. Niwa, T. Ohtoshi, and T. Kuroda, Jpn. J. Appl. Phys. 35, L599 (1996). Tight-binding analysis of the optical matrix element in wurtzite- and zincblende-GaN quantum wells.
    20. L. C. Lew Yan Voon, M. Willatzen, M. Cardona, and L. R. Ram-Mohan, J. App. Phys. 80, 600 (1996). Comment on ``Multiband coupling effects on electron quantum well intersubband transitions''.
    21. Z.-Z. Xu, J. Phys. Cond. Matter 7, L503 (1995). Optical properties of strained GaAs layers.
    22. T. B. Boykin, Phys. Rev. B 52, 16317 (1995). Incorporation of incompleteness in the k.p perturbation theory.
    23. P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, Phys. Rev. B 52, 12158 (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces.
    24. F. Malonga, D. Bertho, C. Jouanin, and J.-M. Jancu, Phys. Rev. B 52, 5124 (1995). Tight-binding study of ZnSe/ZnTe strained superlattices: Determination of the band offset from the optical properties.
    25. J.R. Morris, C. Z. Wang, and K. M. Ho, Phys. Rev. B 52, 4138 (1995). Relationship between structure and conductivity in liquid carbon.
    26. P. V. Santos, A. Cantarero, M. Cardona, R. Nötzel, and K. Ploog, Phys. Rev. B 52, 1970 (1995). Optical properties of (311)-oriented GaAs/AlAs superlattices.
    27. L. C. Lew Yan Voon, M. Willatzen, and L. R. Ram-Mohan, J. Appl. Phys. 78, 295 (1995). Can normal incidence absorption be realized with n-doped (001)-grown direct-gap quantum wells?
    28. P. V. Santos, M. Willatzen, M. Cardona, and A. Cantarero, Phys. Rev. B 51, 5121 (1995). Tight-binding calculation of spin splittings in semiconductor superlattices.
    29. M. Graf and P. Vogl, Phys. Rev. B 51, 4940 (1995). Electromagnetic-fields and dielectric response in empirical tight-binding theory.
    30. L. R. Ram-Mohan and J. R. Meyer, Int. J. Nonlinear Opt. Phys. 4, 191 (1995). Multiband finite element modeling of wavefunction-engineered electro-optical devices.
    31. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 50, 14421 (1994). Calculations of second-order nonlinear optical susceptibilities in III-V and II-VI semiconductor heterostructures.
    32. A. Fainstein, P. Etchegoin, P. V. Santos, M. Cardona, K. Totemeyer, and K. Eberl, Phys. Rev. B 50, 11850 (1994). Inplane birefringence of GaAs/AlAs multiple-quantum wells.
    33. B. L. Zhang, C. Z. Wang, K. M. Ho, and C. T. Chan, Europhysics Lett. 28, 219 (1994). Structure of collapsed solid C-60.
    34. P. V. Santos, P. Etchegoin, M. Cardona, B. Brar, and H. Kroemer, Phys. Rev. B 50, 8746 (1994). Optical anisotropy in InAs/AlSb superlattices.
    35. L. C. Lew Yan Voon and L. R. Ram-Mohan, Superlattices and Microstructures 14, 49 (1993). Band-to-band lasing in type-II GaAs-AlAs superlattices.

12. L. C. Lew Yan Voon, L. R. Ram-Mohan, H. Luo, and J. K. Furdyna, Phys. Rev. B 47, 6585-6589 (1993).
    Barrier localization effects in the Al_xGa_(1-x)As-Al_yGa_(1-y)As superlattices
    1. L. R. Ram-Mohan, I. Vurgaftman, J. R. Meyer, and D. Dossa, in {\it Handbook of Nanostructured Materials and Nanotechnology}, H. S. Nalwa (editor), vol.~2, chp.~15, p.~707 (Academic Press, 2000). Wave-function engineering: A new paradigm in quantum nanostructure modeling.
    2. L. C. Lew Yan Voon, L. R. Ram-Mohan, and R. A. Soref, Appl. Phys. Lett. 70, 1837 (1997). Electronic and optical properties of (001) Si/ZnS heterostructures.
    3. Z. Yu, M. A. Mattson, T. H. Myers, K. A. Harris, R. W. Yanka, L. M. Mohnkern, L. C. Lew Yan Voon, L. R. Ram-Mohan, R. G. Benz II, B. K. Wagner, and C. J. Summers, J. Electron. Materials 24, 685 (1995). Reflectance and photoreflectance for in-situ monitoring of the molecular beam epitaxial growth of CdTe and Hg-based materials.
    4. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, E. R. Youngdale, and L. R. Ram-Mohan, IEEE J. Quant. Elec. 31, 706 (1995). Momentum-space reservoir for enhancement of intersubband 2nd-harmonic generation.
    5. M. Dobrowolska, H. Luo, and J. K. Furdyna, Acta Physica Polonica A 87, 95 (1995). Optical-properties of diluted magnetic semiconductor quantum structures.
    6. L. R. Ram-Mohan and J. R. Meyer, Int. J. Nonlinear Opt. Phys. 4, 191 (1995). Multiband finite element modeling of wavefunction-engineered electro-optical devices.
    7. R. Goloskie, J. W. Kramer, and L. R. Ram-Mohan, Computers in Physics 8, 679 (1994). Quantum-mechanical tunneling and finite elements.
    8. N. Dai, L. R. Ram-Mohan, H. Luo, G. L. Yang, F. C. Zhang, M. Dobrowolska, and J. K. Furdyna, Phys. Rev. B 50, 18153 (1994). Observation of above-barrier transitions in superlattices with small magnetically induced band offsets.
    9. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 50, 14421 (1994). Calculations of second-order nonlinear optical susceptibilities in III-V and II-VI semiconductor heterostructures.
    10. Y. A. Aleshchenko, T. N. Zavaritskaya, V. V. Kapaev, Y. V. Kopaev, and N. N. Melnik, JETP Lett. 59, 255 (1994). Resonant raman-scattering and redislocation effects in GaAs/AlGaAs.
    11. L. C. Lew Yan Voon and L. R. Ram-Mohan, Superlattices and Microstructures 14, 49 (1993). Band-to-band lasing in type-II GaAs-AlAs superlattices.
    12. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 47, 15500 (1993). Tight-binding representation of the optical matrix elements: Theory and applications.

13. D. Dossa, L. C. Lew Yan Voon, L. R. Ram-Mohan, C. Parks, R. G. Alonso, A. K. Ramdas, and M. R. Melloch, Appl. Phys. Lett. 59, 2706-2708 (1991).
    Observation of above-barrier quasi-bound states in asymmetric single quantum wells by piezomodulated reflectivity
    1. L. R. Ram-Mohan, I. Vurgaftman, J. R. Meyer, and D. Dossa, in {\it Handbook of Nanostructured Materials and Nanotechnology}, H. S. Nalwa (editor), vol.~2, chp.~15, p.~707 (Academic Press, 2000). Wave-function engineering: A new paradigm in quantum nanostructure modeling.
    2. W. Lu, Y. Mu, X. Liu, X. Chen, M. Wan, G. Shi, Y. Qiao, S. Shen, Y. Fu, and M. Willander, Phys. Rev. B 57, 9787 (1998). Direct observation of above-quantum-step quasibound states in GaAs/Al_xGa_{1-x}As/vacuum heterostructures.
    3. A. Aldea, S. Vlaev, G. Monsivais, F. García-Moliner, and V. R. Velasco, J. Phys.: Condens. Matter 8, 7733 (1996). The electronic transmittance and density of states in triangular quantum well and barrier structures.
    4. Z. Xiong and D. J. Miller, Superlattices and Microstructures 19, 263 (1996). Unexpected features in the magnetoresistance of a quantum-well at room-temperature.
    5. S. Moneger, H. Qiang, and F. H. Pollak, J. Electron. Mater. 24, 1341 (1995). Contactless electroreflectance study of a GaAlAs/InGaAs/GaAs/GaAlAs step quantum-well structure.
    6. L. C. Lew Yan Voon and M. Willatzen, Semicond. Science Technol. 10, 416 (1995). Calculations of the intersubband optical properties of quantum wells, wires and dots.
    7. L. R. Ram-Mohan and J. R. Meyer, Int. J. Nonlinear Opt. Phys. 4, 191 (1995). Multiband finite element modeling of wavefunction-engineered electro-optical devices.
    8. R. Goloskie, J. W. Kramer, and L. R. Ram-Mohan, Computers in Physics 8, 679 (1994). Quantum-mechanical tunneling and finite elements.
    9. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 50, 14421 (1994). Calculations of second-order nonlinear optical susceptibilities in III-V and II-VI semiconductor heterostructures.
    10. M. Colocci, J. Martinezpastor, and M. Gurioli, Phys. Rev. B. 48, 8089 (1993). Above-barrier resonant transitions in Al_xGa_(1-x)As/AlAs/GaAs heterostructures.
    11. L. C. Lew Yan Voon, L. R. Ram-Mohan, H. Luo, and J. K. Furdyna, Phys. Rev. B 47, 6585-6589 (1993). Barrier localization effects in the Al_xGa_(1-x)As-Al_yGa_(1-y)As superlattices.
    12. C. Parks, A. K. Ramdas, M. R. Melloch, and L. R. Ram-Mohan, Phys. Rev. B 48, 5413 (1993). Piezomodulated-reflectivity study of minibands in Al_xGa_(1-x)As/GaAs superlattices.
    13. F. H. Pollak and H. Shen, Materials Science & Engineering R-reports 10, 275 (1993). Modulation spectroscopy of semiconductors - bulk thin-film, microstructures, surfaces interfaces and devices.
    14. C. Parks, R. G. Alonso, A. K. Ramdas, L. R. Ram-Mohan, D. Dossa, and M. R. Melloch, Phys. Rev. B 48, 5413 (1993). Piezomodulated-reflectivity of asymmetric and symmetrical Al_x1Ga_(1-x1)As/GaAs/Al_x3Ga_(1-x3)As single quantum wells.

14. L. C. Lew Yan Voon, PhD thesis, Worcester Polytechnic Institute (1993).
    Electronic and optical properties of semiconductors: A study based on the empirical tight binding model
    1. L. C. Lew Yan Voon, M. Willatzen, P. V. Santos, M. Cardona, D. Munzar, and N. E. Christensen, Solid State Electron. 40, 191 (1996). Investigation of Inversion-Asymmetry Effects on the Band Structure of Sn₁Ge_n Superlattices.
    2. M. Willatzen, L. C. Lew Yan Voon, P. V. Santos, M. Cardona, D. Munzar, and N. E. Christensen, Phys. Rev. B 52, 5070 (1995). Theoretical study of band-edge states in Sn₁Ge_n strained-layer superlattices.
    3. L. C. Lew Yan Voon and M. Willatzen, Semicond. Science Technol. 10, 416 (1995). Calculations of the intersubband optical properties of quantum wells, wires and dots.
    4. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 50, 14421 (1994). Calculations of second-order nonlinear optical susceptibilities in III-V and II-VI semiconductor heterostructures.
    5. L. C. Lew Yan Voon and L. R. Ram-Mohan, Superlattices and Microstructures 14, 49 (1993). Band-to-band lasing in type-II GaAs-AlAs superlattices.

15. L. C. Lew Yan Voon, M.Sc. thesis, University of British Columbia (1989).
    An investigation of coherent state path integrals as applied to a harmonic oscillator and a single spin
    1. M. Bergeron, Fortschritte der Physik-Progress of Physics 40, 119 (1992). Coherent state path integral for the harmonic-oscillator and a spin particle in a constant magnetic-field.
    2. L. C. Lew Yan Voon, Can. J. Phys. 69, 1221 (1991). Coherent state path integral, operator ordering and regularization: A simple example.