Wright State University Physics Department Seminar
Friday, March 14, 2014
3:00pm in 204 Fawcett Hall
"Modeling of beta-gallium oxide and its Al and In alloys"
By Dr. Stefan Badescu, Sensors Directorate, AFRL
-Gallium oxide (-Ga2O3) is a wide-bandgap semiconductor that can serve as a native substrate for electronic devices. There is an increased interest in possible band offests produced at interfaces between this material and its alloys, but experimental realizations are relatively scarce. The structural and electronic properties of alloys like (AlxGa1-x)2O3 and (InxGa1-x)2O3 are not fully understood and first-princple modeling plays predictive role for these interfaces. This talk will present aspects of Density Functional Modeling of band alignment and strain at these interfaces, from local density approximation to hybrid functionals.
Bio: Dr Badescu received a Master degree in Physics from Al. I. Cuza University, Romania in 1997 and a Ph.D. in Theoretical Physics from Brown University in 2003. Between 2033 and 2010 he was a National Research Council associate at the Naval Research Laboratory in Washington DC and a research faculty at University of MD – College Park. From 2011 he works in the Sensors Directorate of the Air Force Research Laboratory. His research includes structures and dynamics at metal and semiconductor surfaces, spin-orbit coupling of electron qubits, and electronic properties of materials.