Concepts and fundamental principles of advanced high speed electronic devices operating at frequencies greater than 1 GHz, including MESFET, HEMT, RF MOSFET, HBT, and carbon electronics. Models and discussions of semiconductor devices fabricated in a variety of material systems, such as strained Si, III-V compound semiconductors, Si-Ge, CNT and graphene. A description of advanced optoelectronic devices including light-emitting diodes, semiconductor lasers and photovoltaic systems (solar cell). Department Managed Prerequisite(s): (Undergraduate level EE 4420 Minimum Grade of D and Undergraduate level EE 4420L Minimum Grade of D) or (Graduate level EE 6420 Minimum Grade of D and Graduate level EE 6420L Minimum Grade of D)
Must be enrolled in one of the following Levels: Graduate, Medical, Professional. Must be enrolled in one of the following Colleges: College of Egr & Computer Sci.